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Temperature-dependence of exciton radiative recombination in (Al,Ga)N/GaN quantum wells grown on a-plane GaN substrates


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Authors

Corfdir, P 
Dussaigney, A 
Teisseyre, H 
Suski, T 
Grzegory, I 

Abstract

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature range. At higher temperatures, the escape of charge carriers from the quantum well to the (Al,Ga)N barriers is accompanied by a reduction in internal quantum efficiency. Based on the temperature-dependence of time-resolved photoluminescence experiments, we also show how the local disorder affects the exciton radiative lifetime at low temperature and the exciton non-radiative lifetime at high temperature.

Description

Keywords

exciton, GaN, quantum well, radiative lifetime

Journal Title

Japanese Journal of Applied Physics

Conference Name

Journal ISSN

0021-4922
1347-4065

Volume Title

Publisher

The Japan Society of Applied Physics
Sponsorship
We acknowledge financial support from the Swiss National Science Foundation through Project No. 129715 and from the Polish National Science Center (Project DEC-2011/ 03/B/ST3/02647). The work was partially supported by the European Union within European Regional Development Fund through Innovative Economy Grant No. POIG.01.01.02-00-008/08. P.C. also acknowledges financing from the European Union Seventh Framework Program under grant agreement No. 265073.