Ultra-low threshold gallium nitride photonic crystal nanobeam laser
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Authors
Abstract
jats:pWe report exceptionally low thresholds (9.1 μJ/cm2) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.</jats:p>
Description
Keywords
Quantum wells, III-V semiconductors, Active layer, Photonic crystals, Etching
Journal Title
Applied Physics Letters
Conference Name
Journal ISSN
0003-6951
1077-3118
1077-3118
Volume Title
106
Publisher
AIP Publishing
Publisher DOI
Sponsorship
Engineering and Physical Sciences Research Council (EP/H047816/1)
Engineering and Physical Sciences Research Council (EP/M011682/1)
Engineering and Physical Sciences Research Council (EP/M011682/1)
This work was
enabled by facilities available at the Center for Nanoscale
Systems (CNS), a member of the National Nanotechnology
Infrastructure Network (NNIN), which was supported by the
National Science Foundation under NSF Award No. ECS-
0335765. This work was also supported in part by the NSF
Materials World Network (Award No. 1008480), the
Engineering and Physical Sciences Research Council
(Award No. EP/H047816/1), and the Royal Academy of
Engineering.