jats:sec<jats:label />jats:pDroplets grown by modified droplet epitaxy on non‐polar (11‐20) surfaces of InGaN epilayers on GaN have been seen to be associated with underlying ring‐like structures. This work discusses droplet etching as a possible mechanism for ring formation, and droplet creeping as a possible explanation for the droplets sitting askew of the ring centre. Transmission electron microscopy (TEM) analysis shows the droplets to move along the <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552633-math-0001.png" xlink:title="urn:x-wiley:14381656:media:pssb201552633:pssb201552633-math-0001" /> jats:italicc</jats:italic>‐axis, and indicates that they have a very high indium content.<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552633-gra-0001.png" xlink:title="pssb201552633-gra-0001" /></jats:p>jats:pThe image shows atomic force microscopy (AFM) data of a double‐ring structure, rendered in 3D.</jats:p></jats:sec>