Modeling of switching mechanism in GeSbTe chalcogenide superlattices.
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Peer-reviewed
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Authors
Yu, X
Robertson, J
Abstract
We study the switching process in chalcogenide superlattice (CSL) phase-change memory materials by describing the motion of an atomic layer between the low and high resistance states. Two models have been proposed by different groups based on high-resolution electron microscope images. Model 1 proposes a transition from Ferro to Inverted Petrov state. Model 2 proposes a switch between Petrov and Inverted Petrov states. For each case, we note that the main transition is actually a vertical displacement of a Ge layer through a Te layer, followed by a lateral motion of GeTe sublayer to the final, low energy structure. Through calculating energy barriers, the rate-determining step is the displacive transition.
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0912 Materials Engineering
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Sci Rep
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Journal ISSN
2045-2322
2045-2322
2045-2322
Volume Title
5
Publisher
Nature Publishing Group
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Sponsorship
European Commission (317746)