jats:pWe demonstrate the growth of high-quality, continuous monolayer graphene on Cu foils using an open roll-to-roll (R2R) chemical vapor deposition (CVD) reactor with both static and moving foil growth conditions. N2 instead of Ar was used as carrier gas to reduce process cost, and the concentrations of H2 and CH4 reactants were kept below the lower explosive limit to ensure process safety for reactor ends open to ambient. The carrier mobility of graphene deposited at a Cu foil winding speed of 5 mm/min was 5270–6040 cm2 V−1 s−1 at room temperature (on 50 μm × 50 μm Hall devices). These results will enable the inline integration of graphene CVD for industrial R2R production.</jats:p>