High Pressure Quantum Oscillation Study of BiTeI and Bi2Te3
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The work presented in this thesis investigates the behaviour of the Rashba semi-conductor BiTeI and of the topological insulator
At ambient pressure, two distinct quantum oscillation frequencies in BiTeI, corresponding to inner and outer Fermi surface orbits as a result of spin-splitting caused by the Rashba effect, were observed. Using a model Hamiltonian with a Rashba interaction term to model this system, experimental results were fitted to determine model parameters. Based on this model, carrier densities for the samples were calculated and there was good agreement with Hall effect measurements. The phase of the oscillations showed that both Fermi surfaces have a Berry phase of
As pressure is applied, it was observed that the inner Fermi surface expands while the outer Fermi surface shrinks. Phase analysis of the oscillations showed deviations from the ambient pressure value, hinting at a topological transition.
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Under pressure, a slight decrease in the low field Hall coefficient and a new frequency appearing at