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Temperature Effects in the Band Structure of Topological Insulators.

Accepted version
Peer-reviewed

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Type

Article

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Authors

Monserrat, Bartomeu 
Vanderbilt, David 

Abstract

We study the effects of temperature on the band structure of the Bi_{2}Se_{3} family of topological insulators using first-principles methods. Increasing temperature drives these materials towards the normal state, with similar contributions from thermal expansion and from electron-phonon coupling. The band gap changes with temperature reach 0.3 eV at 600 K, of similar size to the changes caused by electron correlation. Our results suggest that temperature-induced topological phase transitions should be observable near critical points of other external parameters.

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Keywords

0912 Materials Engineering

Journal Title

Phys Rev Lett

Conference Name

Journal ISSN

0031-9007
1079-7114

Volume Title

117

Publisher

American Physical Society (APS)