Temperature Effects in the Band Structure of Topological Insulators.
Accepted version
Peer-reviewed
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Authors
Monserrat, Bartomeu
Vanderbilt, David
Abstract
We study the effects of temperature on the band structure of the Bi_{2}Se_{3} family of topological insulators using first-principles methods. Increasing temperature drives these materials towards the normal state, with similar contributions from thermal expansion and from electron-phonon coupling. The band gap changes with temperature reach 0.3 eV at 600 K, of similar size to the changes caused by electron correlation. Our results suggest that temperature-induced topological phase transitions should be observable near critical points of other external parameters.
Description
Keywords
0912 Materials Engineering
Journal Title
Phys Rev Lett
Conference Name
Journal ISSN
0031-9007
1079-7114
1079-7114
Volume Title
117
Publisher
American Physical Society (APS)