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Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities

Accepted version
Peer-reviewed

Repository URI

https://www.repository.cam.ac.uk/handle/1810/286508

Repository DOI

https://doi.org/10.17863/CAM.33818

Files

Accepted version (1.27 MB)

Type

Article

Change log

Authors

Christian, GM 
Schulz, S 
Kappers, MJ 
Humphreys, CJ 
Oliver, RA 
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Description

Keywords

5108 Quantum Physics, 51 Physical Sciences, 5104 Condensed Matter Physics

Journal Title

Physical Review B

Conference Name

Journal ISSN

2469-9950
2469-9969

Volume Title

98

Publisher

American Physical Society (APS)

Publisher DOI

https://doi.org/10.1103/PhysRevB.98.155301

Rights

http://www.rioxx.net/licenses/all-rights-reserved
Sponsorship
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/I012591/1)

Collections

Cambridge University Research Outputs