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Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices.

Published version
Peer-reviewed

Type

Article

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Authors

Li, Huanglong 
Robertson, John 

Abstract

The electronic structure and conduction mechanism of chalcogenide-based Ovonic threshold switches (OTS) used as selectors in cross-point memory arrays is derived from density functional calculations and quasi-Fermi level models. The switching mechanism in OTS is primarily electronic. This uses a specific electronic structure, with a wide tail of localized states below the conduction band edge. In amorphous GeSe2-x the conduction band consists of Ge-Se σstates with a low effective mass, and with a broad tail of localized Ge-Ge σ states below this band edge. This leads to the OTS behavior. At high fields the electron quasi-EF moves up through these tail states, lowering the conductivity activation energy, and giving the non-linear switching process. The 4:2 coordinated GeSe2-x based alloys are the most favorable OTS material because they have the correct network connectivity to give a high electron mobility and lack of crystallization, a favorable band structure to produce the non-linear conduction, an optimum band gap, and with nitrogen or carbon alloying, a sufficiently low off-current.

Description

Keywords

0307 Theoretical and Computational Chemistry

Journal Title

Sci Rep

Conference Name

Journal ISSN

2045-2322
2045-2322

Volume Title

9

Publisher

Springer Science and Business Media LLC
Sponsorship
Engineering and Physical Sciences Research Council (EP/P005152/1)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (737109)
European Commission (317746)