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Dispersion retrieval from multi-level ultra-deep reactive-ion-etched microstructures for terahertz slow-wave circuits

Published version
Peer-reviewed

Type

Article

Change log

Authors

Baik, Chan-Wook 
Young Ahn, Ho 
Kim, Yongsung 
Lee, Jooho 
Hong, Seogwoo 

Abstract

jats:pA multi-level microstructure is proposed for terahertz slow-wave circuits, with dispersion relation retrieved by scattering parameter measurements. The measured return loss shows strong resonances above the cutoff with negligible phase shifts compared with finite element analysis. Splitting the circuit into multi levels enables a low aspect ratio configuration that alleviates the loading effect of deep-reactive-ion etching on silicon wafers. This makes it easier to achieve flat-etched bottom and smooth sidewall profiles. The dispersion retrieved from the measurement, therefore, corresponds well to the theoretical estimation. The result provides a straightforward way to the precise determination of dispersions in terahertz vacuum electronics.</jats:p>

Description

Keywords

40 Engineering, 4008 Electrical Engineering, 51 Physical Sciences

Journal Title

Applied Physics Letters

Conference Name

Journal ISSN

0003-6951
1077-3118

Volume Title

104

Publisher

AIP Publishing