Carbon-Based Resistive Memories
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Peer-reviewed
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Abstract
Carbon-based nonvolatile resistive memories are an emerging technology. Switching endurance remains a challenge in carbon memories based on tetrahedral amorphous carbon (ta-C). One way to counter this is by oxygenation to increase the repeatability of reversible switching. Here, we overview the current status of carbon memories. We then present a comparative study of oxygen-free and oxygenated carbon-based memory devices, combining experiments and molecular dynamics (MD) simulations.
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Keywords
Nonvolatile memory, oxygenated carbon, RRAM, tetrahedral amorphous carbon, diamond-like carbon, storage class memory
Journal Title
2016 IEEE 8th International Memory Workshop, IMW 2016
Conference Name
2016 IEEE 8th International Memory Workshop
Journal ISSN
2330-7978
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Publisher
IEEE
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Sponsorship
European Commission (309980)