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Carbon-Based Resistive Memories

Accepted version
Peer-reviewed

Type

Conference Object

Change log

Authors

Koelmans, WW 
Bachmann, T 
Zipoli, F 
Ott, AK 
Dou, C 

Abstract

Carbon-based nonvolatile resistive memories are an emerging technology. Switching endurance remains a challenge in carbon memories based on tetrahedral amorphous carbon (ta-C). One way to counter this is by oxygenation to increase the repeatability of reversible switching. Here, we overview the current status of carbon memories. We then present a comparative study of oxygen-free and oxygenated carbon-based memory devices, combining experiments and molecular dynamics (MD) simulations.

Description

Keywords

Nonvolatile memory, oxygenated carbon, RRAM, tetrahedral amorphous carbon, diamond-like carbon, storage class memory

Journal Title

2016 IEEE 8th International Memory Workshop, IMW 2016

Conference Name

2016 IEEE 8th International Memory Workshop

Journal ISSN

2330-7978

Volume Title

Publisher

IEEE
Sponsorship
European Commission (309980)