Similarly to the unipolar SiC Schottky diodes, AlGaN/GaN Schottky devices have been suggested to have a negligible reverse recovery current during turn-off and can therefore be switched at very high frequencies with low power losses [1-2]. This study aims to investigate this claim by comparing the reverse recovery characteristic of an AlGaN/GaN diode with that of a SiC diode and a fast recovery Si P-N diode for the same current (4 A) and voltage rating (700 V). TCAD models of a SiC Schottky diode and an AlGaN/GaN diode have been developed and calibrated against fabricated devices for a better physical understanding of the experimentally observed results. The analysis is based on the trade-off between on-state and reverse recovery parameters at both room and high temperatures. Experimental and TCAD results show that while the AlGaN/GaN heterostructure Schottky diode is expected to provide a significant improvement in switching performance when compared to the conventional bipolar Si P-N diodes, the SiC diode offers a more favourable trade-off between on-state and reverse recovery.