Low temperature growth and optical properties of α-Ga<inf>2</inf>O<inf>3</inf> deposited on sapphire by plasma enhanced atomic layer deposition

Roberts, JW; Chalker, PR; Ding, B; Oliver, RA; Gibbon, JT; Jones, LAH; Dhanak, VR; Phillips, LJ; Major, JD; Massabuau, FCP

Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Accepted version

Peer-reviewed

Repository URI

https://www.repository.cam.ac.uk/handle/1810/297309

Repository DOI

https://doi.org/10.17863/CAM.44358

Files

Accepted version (1.98 MB)

Type

Article

Authors

Roberts, JW

Chalker, PR

Ding, B

Oliver, RA

Gibbon, JT

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Keywords

Characterization, Crystal structure, Crystal morphology, X-ray diffraction, Atomic layer epitaxy, Gallium compounds

Journal Title

Journal of Crystal Growth

Journal ISSN

0022-0248
1873-5002

Volume Title

528

Publisher

Elsevier BV

Publisher DOI

https://doi.org/10.1016/j.jcrysgro.2019.125254

Rights

Attribution-NonCommercial-NoDerivatives 4.0 International

Sponsorship

Engineering and Physical Sciences Research Council (EP/P00945X/1)
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/P024947/1)
Engineering and Physical Sciences Research Council (EP/S019367/1)
Engineering and Physical Sciences Research Council (EP/R00661X/1)

Collections

Cambridge University Research Outputs