Enhanced performance of InAsP nanowires with ultra-thin passivation layer
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Peer-reviewed
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Abstract
Surface passivation with a higher band gap shell has been shown to successfully reduce the density of surface states at the surface of nanowires. The effect of ultra-thin InP passivation layers of thicknesses ∼ 3 -5 nm coated on InAsP nanowires is investigated and compared to bare InAsP nanowires. The ultra-thin passivation exhibited an improvement in carrier lifetime and mobility by approximately a factor of 3. Surface recombination velocity was decreased by at least a factor of 3.
Description
Keywords
51 Physical Sciences, 40 Engineering, 4018 Nanotechnology
Journal Title
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Conference Name
2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Journal ISSN
2162-2027
2162-2035
2162-2035
Volume Title
2019-September
Publisher
IEEE
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All rights reserved
Sponsorship
Royal Commission for the Exhibition of 1851 (RF/2013/451)
European Research Council (716471)
EPSRC (1929228)
European Research Council (716471)
EPSRC (1929228)