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Ternary hypervalent silicon hydrides via lithium at high pressure

Accepted version
Peer-reviewed

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Type

Article

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Authors

Liang, T 
Zhang, Z 
Feng, X 
Jia, H 
Pickard, CJ 

Abstract

Hydrogen is rarely observed as ligand in hypervalent species, however, we find that high-pressure hydrogenation may stabilise hypervalent hydrogen-rich materials. Focussing on ternary silicon hydrides via lithium doping, we find anions composed of hypervalent silicon with H ligands formed under high pressure. Our results reveal two new hypervalent anions: layered-SiH−5 and tricapped triangular prismatic SiH2−. These differ from octahedral SiH2− described in earlier studies. In addition, there are further hydrogen-rich structures, Li3SiH10 and Li2SiH6+δ, which may be stabilised at high pressure. Our work provides pointers to future investigations on hydrogen rich materials.

Description

Keywords

3402 Inorganic Chemistry, 40 Engineering, 34 Chemical Sciences

Journal Title

Physical Review Materials

Conference Name

Journal ISSN

2475-9953
2475-9953

Volume Title

4

Publisher

American Physical Society (APS)

Rights

All rights reserved
Sponsorship
Royal Society (WM150023)
Engineering and Physical Sciences Research Council (EP/P022596/1)