Zip folder containing X-ray diffraction scans and simulation files (.txt files) from partially relaxed porous InGaN superlattice pseudo-substrates an InGaN multiple quantum well (MQW) structures grown on such templates. The pseudo-substrates were porosified by electro-chemical etching at different etching voltages, in which a sub-surface InGaN/InGaN superlattice was etched via threading dislocations acting as etching channels.

File: "Fig 3 - XRD_104_rsm (as-grown SL template).txt" contains X-ray diffraction (XRD) data of the 10-14 reflection for the as-grown InGaN supperlattice (SL) template (sample A1)

File: "Fig 3 - XRD_104_rsm (porous SL template).txt" contains XRD data of the 10-14 reflection for the porosified InGaN SL template (sample A2)

File: "Fig 3 - XRD_105_rsm (as-grown SL template).txt" contains XRD data of the 10-15 reflection for the as-grown InGaN SL template (sample A1)

File: "Fig 3 - XRD_105_rsm (porous SL template).txt" contains XRD data of the 10-15 reflection for the porosified InGaN SL template (sample A2)

File: "Fig 3 - XRD_204_rsm (as-grown SL template).txt" contains XRD data of the 20-24 reflection for the as-grown InGaN SL template (sample A1)

File: "Fig 3 - XRD_204_rsm (porous SL template).txt" contains XRD data of the 20-24 reflection for the porosified InGaN SL template (sample A2)

File: "Fig 3 - XRD_205_rsm (as-grown SL template).txt" contains XRD data of the 20-25 reflection for the as-grown InGaN SL template (sample A1)

File: "Fig 3 - XRD_205_rsm (porous SL template).txt" contains XRD data of the 20-25 reflection for the porosified InGaN SL template (sample A2)

File: "Fig 4a - XRD_002_w2t-scan (as-grown SL template).txt" contains XRD w2t scan data of the 0002 reflection for the as-grown InGaN SL template (sample A1)

File: "Fig 4a & 4b - XRD_002_w2t-scan (porous SL template).txt" contains XRD w2t scan data of the 0002 reflection for the porosified InGaN SL template (sample A2)

File: "Fig 4 - XRD_002_w2t-simulation (as-grown SL template, 9.15%_6.10% fully strained).txt" contains simulated w2t-scans of the 0002 XRD refelction for the as-grown SL template (sample A1). It assumes that the InGaN/InGaN SL is fully strained and consists of alternating InxGa(1-x)N layers with compositions of x = 9.15% and x = 6.10%

File: "Fig 4b - XRD_002_w2t-simulation (porous SL template, 8.85%_5.90% partially relaxed).txt" contains simulated w2t-scans of the 0002 XRD refelction for the porosified SL template (sample A2). It assumes that the InGaN/InGaN SL is partially relaxed and consists of alternating InxGa(1-x)N layers with compositions of x = 8.85% and x = 5.90%

File: "Fig 4b - XRD_002_w2t-simulation (porous SL template, 9.15%_6.10% partially relaxed).txt" contains simulated w2t-scans of the 0002 XRD refelction for the porosified SL template (sample A2). It assumes that the InGaN/InGaN SL is partially relaxed and consists of alternating InxGa(1-x)N layers with compositions of x = 9.15% and x = 6.10%

File: "Fig 7a - XRD_104_rsm (sample B2, non-porous wafer edge).txt" contains XRD data of the 10-14 reflection for the non-porosified edge of sample B2.

File: "Fig 7b - XRD_104_rsm (sample B2, porous centre).txt" contains XRD data of the 10-14 reflection for the porosified centre of sample B2. The InGaN SL template of this sample was porosified at a medium etch voltage and was then overgrown with a multi-quantum well (MQW) structure.

File: "Fig 7c - Relaxation degree as function of average porosity.txt" contains relaxation degree as function of average porosity