RESEARCH DATA for

Lok Yi Lee, Martin Frentrup, Menno J Kappers, Rachel A Oliver, Colin J Humphreys, and David J Wallis
"Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN"

Figure 4:
Feature sizes in (a) [110] and (b) [1-10] directions extracted from 2D-FFT of AFM height data of zb-GaN epilayers grown at different growth temperatures and a constant V/III-ratio of 76. (c) Variation of the aspect ratio of surface features with growth temperature. (d) Variation of root mean square surface roughness with growth temperature.

(a)
T	f_[110]	Error
°C	µm	µm
850	0.64322	0.04336
865	0.81101	0.03838
875	0.6717	0.02989
885	0.87829	0.04024
895	1.17852	0.12805
910	1.31144	0.09031


(b)
T	f_[1-10]	Error
°C	µm	µm
850	3.75016	0.37527
865	2.51037	0.28334
875	2.76867	0.20754
885	2.47103	0.30862
895	2.68251	0.23942
910	2.08025	0.11396		


(c)
T	f_[1-10]/f_[110] 	Error
°C	µm	µm
850	5.83026	0.97641
865	3.09537	0.49584
875	4.12186	0.49239
885	2.81346	0.48029
895	2.27617	0.45046
910	1.58623	0.19613


(d)
T	rms Roughness	Error
°C	nm	nm
850	12.92	0.35
865	11.56	0.19
875	12.00	0.34
885	10.42	0.15
895	11.36	0.13
910	11.94	0.13