RESEARCH DATA for

Lok Yi Lee, Martin Frentrup, Menno J Kappers, Rachel A Oliver, Colin J Humphreys, and David J Wallis
"Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN"

Figure 5:
Zb-GaN content determined by XRD as a function of the GaN epilayer growth temperature. 

T	Zincblende	Error
°C	%	%

850	99.09	0.5
865	99.16	0.5
875	98.95	0.5
885	99.2	0.5
895	98.65	0.5
910	98.31	0.5