Now showing items 3-3 of 3

    • Structure and strain-relaxation effects of defects in InxGa1-xN epilayers 

      Rhode, SL; Fu, WY; Moram, Michelle Anna; Massabuau, Fabien Charles; Kappers, Menno Johannes; McAleese, C; Oehler, F et al. (AIP Publishing, 2014-09-10)
      The formation of trench-defects is observed in 160 nm-thick InxGa1-xN epilayers with x ≤ 0.20, grown on GaN on (0001) sapphire substrates using metalorganic vapour phase epitaxy. The trench-defect density increases with ...