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    • Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy 

      Bennett, Samantha; Smeeton, Tim; Saxey, David; Smith, George; Hooper, Stewart; Heffernan, Jonathan; Humphreys, Colin et al. (Journal of Applied Physics, 2012-03-06)
      Atom probe tomography (APT) has been used to achieve three-dimensional characterization of a III-nitride laser diode (LD) structure grown by molecular beam epitaxy (MBE). Four APT data sets have been obtained, with fields ...