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High curie temperatures in ferromagnetic Cr-doped AlN thin films


Type

Article

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Authors

Kumar, D 
Antifakos, J 
Blamire, MG 
Barber, ZH 

Abstract

Al1-xCrxN thin films with 0.02less than or equal toxless than or equal to0.1 were deposited by reactive co-sputtering onto c-plane (001) sapphire. Room-temperature ferromagnetism with a coercive field of 85 Oe was observed in samples with chromium contents as low as x=0.027 (2.7%). With increasing Cr content the mean magnetic moment is strongly suppressed, with a maximum saturation moment of 0.62 and 0.71 mu(B) per Cr atom at 300 and 50 K, respectively. We show that the Curie temperature of Al1-xCrxN for x=0.027 is greater than 900 K. (C) 2004 American Institute of Physics.

Description

Keywords

room-temperature, diluted magnetic semiconductor, zno

Journal Title

Applied Physics Letters

Conference Name

Journal ISSN

0003-6951
1077-3118

Volume Title

84

Publisher

AIP Publishing