High curie temperatures in ferromagnetic Cr-doped AlN thin films
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Authors
Kumar, D
Antifakos, J
Blamire, MG
Barber, ZH
Abstract
Al1-xCrxN thin films with 0.02less than or equal toxless than or equal to0.1 were deposited by reactive co-sputtering onto c-plane (001) sapphire. Room-temperature ferromagnetism with a coercive field of 85 Oe was observed in samples with chromium contents as low as x=0.027 (2.7%). With increasing Cr content the mean magnetic moment is strongly suppressed, with a maximum saturation moment of 0.62 and 0.71 mu(B) per Cr atom at 300 and 50 K, respectively. We show that the Curie temperature of Al1-xCrxN for x=0.027 is greater than 900 K. (C) 2004 American Institute of Physics.
Description
Keywords
room-temperature, diluted magnetic semiconductor, zno
Journal Title
Applied Physics Letters
Conference Name
Journal ISSN
0003-6951
1077-3118
1077-3118
Volume Title
84
Publisher
AIP Publishing