Growth and optical characterization of multilayers of InGaN quantum dots
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Authors
El-Ella, Haitham
Reid, Benjamin
Holmes, Mark
Taylor, Robert
Kappers, Menno
Oliver, Rachel
Publication Date
2012-01-01ISSN
0022-0248
Publisher
Journal of Crystal Growth
Language
English
Type
Article
Metadata
Show full item recordCitation
Zhu, T., El-Ella, H., Reid, B., Holmes, M., Taylor, R., Kappers, M., & Oliver, R. (2012). Growth and optical characterization of multilayers of InGaN quantum dots. https://doi.org/10.1016/j.jcrysgro.2011.11.001
Abstract
We report on the growth (using metal-organic vapour phase epitaxy) and optical
characterization of single and multiple layers of InGaN quantum dots (QDs), which were formed by
annealing InGaN epilayers at the growth temperature in nitrogen. The size and density of the
nanostructures have been found to be fairly similar for uncapped single and three layer QD samples if
the GaN barriers between the dot layers are grown at the same temperature as the InGaN epilayer. The
distribution of nanostructure heights of the final QD layer of three is wider and is centred around a
larger size if the GaN barriers are grown at two temperatures (first a thin layer at the dot growth
temperature, then a thicker layer at a higher temperature). Micro-photoluminescence studies at 4.2 K
of capped samples have confirmed the QD nature of the capped nanostructures by the observation of
sharp emission peaks with full width at half maximum limited by the resolution of the spectrometer.
We have also observed much more QD emission per unit area in a sample with three QD layers, than in
a sample with a single QD layer, as expected.
Keywords
InGaN, Quantum Dots
Sponsorship
EPSRC (EP/H047816/1)
Identifiers
External DOI: https://doi.org/10.1016/j.jcrysgro.2011.11.001
This record's URL: http://www.dspace.cam.ac.uk/handle/1810/242429
Rights
Attribution-NoDerivs 2.0 UK: England & Wales
Licence URL: http://creativecommons.org/licenses/by-nd/2.0/uk/
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