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dc.contributor.authorCorfdir, Pierreen
dc.contributor.authorDussaigne, Amélieen
dc.contributor.authorTeisseyre, Henryken
dc.contributor.authorSuski, Tadeuszen
dc.contributor.authorGrzegory, Izabellaen
dc.contributor.authorLefebvre, Pierreen
dc.contributor.authorGiraud, Etienneen
dc.contributor.authorShahmohammadi, Mehranen
dc.contributor.authorPhillips, Richarden
dc.contributor.authorGanière, Jean-Danielen
dc.contributor.authorGrandjean, Nicolasen
dc.contributor.authorDeveaud, Benoîten
dc.date.accessioned2013-06-03T07:44:32Z
dc.date.available2013-06-03T07:44:32Z
dc.date.issued2013-05en
dc.identifier.citationP. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, M. Shahmohammadi, R. T. Phillips, J.-D. Ganière, N. Grandjean, and B. Deveaud, Japanese Journal of Applied Physics 52, 08JC01 (2013)en_GB
dc.identifier.issn0021-4922
dc.identifier.urihttp://www.dspace.cam.ac.uk/handle/1810/244657
dc.description.abstractThis article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature range. At higher temperatures, the escape of charge carriers from the quantum well to the (Al,Ga)N barriers is accompanied by a reduction in internal quantum efficiency. Based on the temperature-dependence of time-resolved photoluminescence experiments, we also show how the local disorder affects the exciton radiative lifetime at low temperature and the exciton non-radiative lifetime at high temperature.
dc.description.sponsorshipWe acknowledge financial support from the Swiss National Science Foundation through Project No. 129715 and from the Polish National Science Center (Project DEC-2011/ 03/B/ST3/02647). The work was partially supported by the European Union within European Regional Development Fund through Innovative Economy Grant No. POIG.01.01.02-00-008/08. P.C. also acknowledges financing from the European Union Seventh Framework Program under grant agreement No. 265073.
dc.publisherThe Japan Society of Applied Physics
dc.relation.ispartofseries52en_GB
dc.relation.ispartofseries08JC01en_GB
dc.subjectexcitonen
dc.subjectGaNen
dc.subjectquantum wellen
dc.subjectradiative lifetimeen
dc.titleTemperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substratesen
dc.typeArticle
prism.publicationDate2013en
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2013-05en
dc.identifier.eissn1347-4065
rioxxterms.typeJournal Article/Reviewen
dc.identifier.urlhttp://jjap.jsap.jp/link?JJAP/52/08JC01/en


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