N-type chalcogenides by ion implantation
Hughes, Mark A
Gwilliam, Russell M
Homewood, Kevin P
Hewak, Steven Hinder
Curry, Richard J
Nature Publishing Group
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Hughes, M. A., Fedorenko, Y., Gholipour, B., Yao, J., Lee, T., Gwilliam, R. M., Homewood, K. P., et al. (2014). N-type chalcogenides by ion implantation. Nature Communications, 5 (5346)https://doi.org/10.1038/ncomms6346
Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb ‘doping’ concentrations (~5–11 at.%), incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.
This work was supported by the UK EPSRC grants EP/I018417/1, EP/I019065/1 and EP/I018050/1.
External DOI: https://doi.org/10.1038/ncomms6346
This record's URL: https://www.repository.cam.ac.uk/handle/1810/246079