N-type chalcogenides by ion implantation
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Authors
Hughes, Mark A
Fedorenko, Yanina
Gholipour, Behrad
Yao, Jin
Lee, Taehoon
Gwilliam, Russell M
Homewood, Kevin P
Hinder, Steven
Hewak, Steven Hinder
Elliott, Stephen
Curry, Richard J
Publication Date
2014Journal Title
Nature Communications
ISSN
2041-1723
Publisher
Nature Publishing Group
Volume
5
Number
5346
Language
English
Type
Article
Metadata
Show full item recordCitation
Hughes, M. A., Fedorenko, Y., Gholipour, B., Yao, J., Lee, T., Gwilliam, R. M., Homewood, K. P., et al. (2014). N-type chalcogenides by ion implantation. Nature Communications, 5 (5346)https://doi.org/10.1038/ncomms6346
Abstract
Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb ‘doping’ concentrations (~5–11 at.%), incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.
Sponsorship
This work was supported by the UK EPSRC grants EP/I018417/1, EP/I019065/1 and EP/I018050/1.
Funder references
EPSRC (EP/I018050/1)
Identifiers
External DOI: https://doi.org/10.1038/ncomms6346
This record's URL: https://www.repository.cam.ac.uk/handle/1810/246079
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