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Dynamic selective switching in antiferromagnetically-coupled bilayers close to the spin reorientation transition


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Authors

Fernández-Pacheco, A 
Ummelen, FC 
Lee, JH 

Abstract

jats:pWe have designed a bilayer synthetic antiferromagnet where the order of layer reversal can be selected by varying the sweep rate of the applied magnetic field. The system is formed by two ultra-thin ferromagnetic layers with different proximities to the spin reorientation transition, coupled antiferromagnetically using Ruderman-Kittel-Kasuya-Yosida interactions. The different dynamic magnetic reversal behavior of both layers produces a crossover in their switching fields for field rates in the kOe/s range. This effect is due to the different effective anisotropy of both layers, added to an appropriate asymmetric antiferromagnetic coupling between them. Field-rate controlled selective switching of perpendicular magnetic anisotropy layers as shown here can be exploited in sensing and memory applications.</jats:p>

Description

Keywords

51 Physical Sciences, 5104 Condensed Matter Physics

Journal Title

Applied Physics Letters

Conference Name

Journal ISSN

0003-6951
1077-3118

Volume Title

105

Publisher

AIP Publishing
Sponsorship
European Research Council (247368)