Stability of graphene doping with MoO<inf>3</inf>and I<inf>2</inf>

D'Arsié, L; Esconjauregui, S; Weatherup, Robert; Guo, Yuzheng; Bhardwaj, S; Centeno, A; Zurutuza, A; Cepek, C; Robertson, John

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Authors

D'Arsié, L

Esconjauregui, S

Weatherup, Robert

Guo, Yuzheng

Bhardwaj, S

Centeno, A

Zurutuza, A

Publication Date

2014-09-08

Journal Title

Applied Physics Letters

ISSN

0003-6951

Publisher

AIP Publishing

Volume

105

Pages

1031031-1031035

Language

en_US

Type

Article

Metadata

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Citation

D'Arsié, L., Esconjauregui, S., Weatherup, R., Guo, Y., Bhardwaj, S., Centeno, A., Zurutuza, A., et al. (2014). Stability of graphene doping with MoO<inf>3</inf>and I<inf>2</inf>. Applied Physics Letters, 105 1031031-1031035. https://doi.org/10.1063/1.4895025

Abstract

We dope graphene by evaporation of MoO_3 or by solution-deposition of I_2 and assess the doping stability for its use as transparent electrodes. Electrical measurements show that both dopants increase the graphene sheet conductivity and find that MoO_3-doped graphene is significantly more stable during thermal cycling. Raman spectroscopy finds that neither dopant creates defects in the graphene lattice. In-situ photoemission determines the minimum necessary thickness of MoO_3 for full graphene doping.

Identifiers

External DOI: https://doi.org/10.1063/1.4895025

This record's URL: https://www.repository.cam.ac.uk/handle/1810/246341

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