Stability of Graphene doping with MoO_3 and I_2

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Authors
D’Arsié, Lorenzo
Esconjauregui, Santiago
  Weatherup, Robert
Guo, Yuzheng
Bhardwaj, Sunil
Centeno, Alba
Zurutuza, Amaia
Publication Date
2014-09-08
Journal Title
Applied Physics Letters
ISSN
0003-6951
Publisher
AIP
Volume
105
Pages
1031031-1031035
Language
en_US
Type
Article
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Citation
D’Arsié, L., Esconjauregui, S., Weatherup, R., Guo, Y., Bhardwaj, S., Centeno, A., Zurutuza, A., et al. (2014). Stability of Graphene doping with MoO_3 and I_2. Applied Physics Letters, 105 1031031-1031035. https://doi.org/10.1063/1.4895025
Abstract
We dope graphene by evaporation of MoO_3 or by solution-deposition of I_2 and assess the doping stability for its use as transparent electrodes. Electrical measurements show that both dopants increase the graphene sheet conductivity and find that MoO_3-doped graphene is significantly more stable during thermal cycling. Raman spectroscopy finds that neither dopant creates defects in the graphene lattice. In-situ photoemission determines the minimum necessary thickness of MoO_3 for full graphene doping.
Identifiers
External DOI: https://doi.org/10.1063/1.4895025
This record's URL: https://www.repository.cam.ac.uk/handle/1810/246341

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