Stability of graphene doping with MoO3 and I2
Change log
Authors
D'Arsié, L
Esconjauregui, S
Weatherup, Robert https://orcid.org/0000-0002-3993-9045
Guo, Y
Bhardwaj, S
Abstract
jats:pWe dope graphene by evaporation of MoO3 or by solution-deposition of I2 and assess the doping stability for its use as transparent electrodes. Electrical measurements show that both dopants increase the graphene sheet conductivity and find that MoO3-doped graphene is significantly more stable during thermal cycling. Raman spectroscopy finds that neither dopant creates defects in the graphene lattice. In-situ photoemission determines the minimum necessary thickness of MoO3 for full graphene doping.</jats:p>
Description
Keywords
51 Physical Sciences, 5104 Condensed Matter Physics
Journal Title
Applied Physics Letters
Conference Name
Journal ISSN
0003-6951
1077-3118
1077-3118
Volume Title
105
Publisher
AIP Publishing