Stability of graphene doping with MoO<inf>3</inf>and I<inf>2</inf>
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Authors
D'Arsié, L
Esconjauregui, S
Guo, Yuzheng
Bhardwaj, S
Centeno, A
Zurutuza, A
Cepek, C
Robertson, John
Publication Date
2014-09-08Journal Title
Applied Physics Letters
ISSN
0003-6951
Publisher
AIP Publishing
Volume
105
Pages
1031031-1031035
Language
en_US
Type
Article
Metadata
Show full item recordCitation
D'Arsié, L., Esconjauregui, S., Weatherup, R., Guo, Y., Bhardwaj, S., Centeno, A., Zurutuza, A., et al. (2014). Stability of graphene doping with MoO<inf>3</inf>and I<inf>2</inf>. Applied Physics Letters, 105 1031031-1031035. https://doi.org/10.1063/1.4895025
Abstract
We dope graphene by evaporation of MoO_3 or by solution-deposition of I_2 and assess the doping stability for its use as transparent electrodes. Electrical measurements show that both dopants increase the graphene sheet conductivity and find that MoO_3-doped graphene is significantly more stable during thermal cycling. Raman spectroscopy finds that neither dopant creates defects in the graphene lattice. In-situ photoemission determines the minimum necessary thickness of MoO_3 for full graphene doping.
Identifiers
External DOI: https://doi.org/10.1063/1.4895025
This record's URL: https://www.repository.cam.ac.uk/handle/1810/246341
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