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dc.contributor.authorRobertson, Johnen
dc.contributor.authorGuo, Yen
dc.contributor.authorLin, Len
dc.date.accessioned2014-11-21T15:38:37Z
dc.date.available2014-11-21T15:38:37Z
dc.date.issued2014en
dc.identifier.citationRobertson et al. Journal of Applied Physics (2014) Vol. 117, 112806. DOI: 10.1063/1.4913832en
dc.identifier.issn0021-8979
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/246440
dc.description.abstractThe paper describes the reasons for the greater difficulty in the passivation of interface defects of III-V semiconductors like GaAs. These include the more complex reconstructions of the starting surface which already possess defect configurations, the possibility of injecting As antisites into the substrate which give rise to gap states, and the need to avoid As-As bonds and As dangling bonds which give rise to gap states. The nature of likely defect configurations in terms of their electronic structure is described. The benefits of diffusion barriers and surface nitridation are discussed.
dc.languageEnglishen
dc.language.isoenen
dc.publisherAIP Publishing
dc.titleDefect state passivation at III-V oxide interfaces for complementary metal-oxide-semiconductor devicesen
dc.typeConference Object
dc.description.versionThis is the author accepted manuscript. The final version is available from AIP via http://dx.doi.org/10.1063/1.4913832en
prism.number112806en
prism.publicationDate2014en
prism.publicationNameJournal of Applied Physicsen
prism.startingPage117
rioxxterms.versionofrecord10.1063/1.4913832en
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2014en
dc.identifier.eissn1089-7550
rioxxterms.typeConference Paper/Proceeding/Abstracten
pubs.funder-project-idEPSRC (EP/I014047/1)


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