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dc.contributor.authorHoye, Roberten
dc.contributor.authorHeffernan, Shaneen
dc.contributor.authorIevskaya, Yuliaen
dc.contributor.authorSadhanala, Adityaen
dc.contributor.authorFlewitt, Andrewen
dc.contributor.authorFriend, Richarden
dc.contributor.authorMacManus-Driscol, Judith Len
dc.contributor.authorMusselman, Kevin Pen
dc.date.accessioned2015-02-10T12:24:17Z
dc.date.available2015-02-10T12:24:17Z
dc.date.issued2014-11-24en
dc.identifier.citationACS Appl. Mater. Interfaces, 2014, 6 (24), pp 22192–22198, DOI: 10.1021/am5058663en
dc.identifier.issn1944-8244
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/246718
dc.description.abstractThe efficiencies of open-air processed Cu2O/Zn1−xMgxO heterojunction solar cells are doubled by reducing the effect of the Schottky barrier between Zn1−xMgxO and the indium tin oxide (ITO) top contact. By depositing Zn1−xMgxO with a long band-tail, charge flows through the Zn1−xMgxO/ITO Schottky barrier without rectification by hopping between the sub-bandgap states. High current densities are obtained by controlling the Zn1−xMgxO thickness to ensure that the Schottky barrier is spatially removed from the p−n junction, allowing the full built-in potential to form, in addition to taking advantage of the increased electrical conductivity of the Zn1−xMgxO films with increasing thickness. This work therefore shows that the Zn1−xMgxO window layer sub-bandgap state density and thickness are critical parameters that can be engineered to minimize the effect of Schottky barriers on device performance. More generally, these findings show how to improve the performance of other photovoltaic system reliant on transparent top contacts, e.g., CZTS and CIGS.
dc.description.sponsorshipThis work was supported by EPSRC of the UK (award number RG3717)
dc.publisherAmerican Chemical Society
dc.subjectCu2O solar cellsen
dc.subjectSchottky barrieren
dc.subjectelectrochemical depositionen
dc.subjectspatial atmospheric atomic layer depositionen
dc.subjectzinc magnesium oxideen
dc.titleEngineering Schottky Contacts in Open-Air Fabricated Heterojunction Solar Cells to Enable High Performance and Ohmic Charge Transporten
dc.typeArticle
dc.provenanceOA-2471
dc.description.versionThis is the accepted manuscript. The final version is available from ACS at http://pubs.acs.org/doi/abs/10.1021/am5058663.en
prism.endingPage22198
prism.publicationDate2014en
prism.publicationNameACS Applied Materials & Interfacesen
prism.startingPage22192
prism.volume24en
dc.rioxxterms.funderEPSRC
dc.rioxxterms.projectidRG3717
rioxxterms.versionofrecord10.1021/am5058663en
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2014-11-24en
dc.contributor.orcidHoye, Robert [0000-0002-7675-0065]
dc.contributor.orcidSadhanala, Aditya [0000-0003-2832-4894]
dc.contributor.orcidFlewitt, Andrew [0000-0003-4204-4960]
dc.contributor.orcidFriend, Richard [0000-0001-6565-6308]
dc.identifier.eissn1944-8252
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEuropean Research Council (247276)
rioxxterms.freetoread.startdate2015-10-24


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