Origin of the high work function and high conductivity of MoO3
Change log
Authors
Guo, Y
Robertson, J
Abstract
jats:pThe large work function of MoO3 of 6.6 eV is due to its closed shall character and the dipole layer created by planes of terminal O1 oxygen sites which lower the electrostatic potential of the inner Mo-O units. These O1 sites arise from the high stoichiometry of MoO3. The O vacancy is most stable at the 2-fold O2 site. It is a shallow donor and has a small formation energy in the O poor limit so that MoO3 easily becomes a degenerate semiconductor.</jats:p>
Description
Keywords
Vacancies, Work functions, Molybdenum, Band gap, Electrostatics
Journal Title
Applied Physics Letters
Conference Name
Journal ISSN
0003-6951
1077-3118
1077-3118
Volume Title
105
Publisher
AIP Publishing
Publisher DOI
Sponsorship
The authors are grateful to EPSRC for funding.