Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition
Applied Physics Letters
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Dlubak, B., Kidambi, P., Weatherup, R., Hofmann, S., & Robertson, J. (2012). Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition. Applied Physics Letters, 100 (173113)https://doi.org/10.1063/1.4707376
We report on a large improvement in the wetting of Al2O3 thin films grown by unseeded atomic layer deposition on monolayer graphene, without creating point defects. This enhanced wetting is achieved by greatly increasing the nucleation density through the use of polar traps induced on the graphene surface by an underlying metallic substrate. The resulting Al2O3/graphene stack is then transferred to SiO2 by standard methods.
P.R.K. acknowledges funding from Cambridge Commonwealth Trust. R.S.W. acknowledges funding from EPSRC (Doctoral training award). S.H. acknowledges funding from ERC Grant InsituNANO (No. 279342) and EPSRC (Grant No. EP/ H047565/1).
European Research Council (279342)
External DOI: https://doi.org/10.1063/1.4707376
This record's URL: https://www.repository.cam.ac.uk/handle/1810/246863