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High-performance solution-processed amorphous- oxide-semiconductor TFTs with organic polymeric gate dielectrics


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Authors

Pecunia, V 
Banger, K 
Sirringhaus, Henning  ORCID logo  https://orcid.org/0000-0001-9827-6061

Abstract

In this study we investigate the behavior of solution-processed metal-oxide-semiconductor transistors utilizing organic polymeric gate dielectrics. By adopting organic dielectrics covering a range of chemistries and relative permittivity values, we demonstrate the general outstanding performance of the resulting hybrid devices, which feature state-of-the-art charge-carrier mobility and the capability of low voltage operation, while allowing solution-based processing. Furthermore, we show the extraordinary stability of these transistors under constant-current bias stress.

Description

Keywords

amorphous metal-oxide semiconductors, organic dielectrics, hybrid thin-film transistors, solution-processed transistors, bias-stress stability

Journal Title

Advanced Electronic Materials

Conference Name

Journal ISSN

2199-160X
2199-160X

Volume Title

1

Publisher

Wiley
Sponsorship
Engineering and Physical Sciences Research Council (EP/K03099X/1)
Engineering and Physical Sciences Research Council (EP/L50516X/1)
We gratefully acknowledge financial support from the European Commission through the POINTS project (FP7-NMP-2010-Small-4).