High-performance solution-processed amorphous- oxide-semiconductor TFTs with organic polymeric gate dielectrics
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Authors
Abstract
In this study we investigate the behavior of solution-processed metal-oxide-semiconductor transistors utilizing organic polymeric gate dielectrics. By adopting organic dielectrics covering a range of chemistries and relative permittivity values, we demonstrate the general outstanding performance of the resulting hybrid devices, which feature state-of-the-art charge-carrier mobility and the capability of low voltage operation, while allowing solution-based processing. Furthermore, we show the extraordinary stability of these transistors under constant-current bias stress.
Description
Keywords
amorphous metal-oxide semiconductors, organic dielectrics, hybrid thin-film transistors, solution-processed transistors, bias-stress stability
Journal Title
Advanced Electronic Materials
Conference Name
Journal ISSN
2199-160X
2199-160X
2199-160X
Volume Title
1
Publisher
Wiley
Publisher DOI
Sponsorship
Engineering and Physical Sciences Research Council (EP/K03099X/1)
Engineering and Physical Sciences Research Council (EP/L50516X/1)
Engineering and Physical Sciences Research Council (EP/L50516X/1)
We gratefully acknowledge financial support from the European Commission through the POINTS project (FP7-NMP-2010-Small-4).