High-Performance Solution-Processed Amorphous-Oxide-Semiconductor TFTs with Organic Polymeric Gate Dielectrics
Banger, Kulbinder K
Advanced Electronic Materials
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Pecunia, V., Banger, K. K., & Sirringhaus, H. (2015). High-Performance Solution-Processed Amorphous-Oxide-Semiconductor TFTs with Organic Polymeric Gate Dielectrics. Advanced Electronic Materials, 1 https://doi.org/10.1002/aelm.201400024
In this study we investigate the behavior of solution-processed metal-oxide-semiconductor transistors utilizing organic polymeric gate dielectrics. By adopting organic dielectrics covering a range of chemistries and relative permittivity values, we demonstrate the general outstanding performance of the resulting hybrid devices, which feature state-of-the-art charge-carrier mobility and the capability of low voltage operation, while allowing solution-based processing. Furthermore, we show the extraordinary stability of these transistors under constant-current bias stress.
amorphous metal-oxide semiconductors, organic dielectrics, hybrid thin-film transistors, solution-processed transistors, bias-stress stability
We gratefully acknowledge financial support from the European Commission through the POINTS project (FP7-NMP-2010-Small-4).
Engineering and Physical Sciences Research Council (EP/K03099X/1)
Engineering and Physical Sciences Research Council (EP/L50516X/1)
External DOI: https://doi.org/10.1002/aelm.201400024
This record's URL: https://www.repository.cam.ac.uk/handle/1810/247147