Optimizing GaN (112‾2) hetero-epitaxial templates grown on (101‾0) sapphire
Physica Status Solidi (B)
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Pristovsek, M., Frentrup, M., Han, Y., & Humphreys, C. (2015). Optimizing GaN (112‾2) hetero-epitaxial templates grown on (101‾0) sapphire. Physica Status Solidi (B), 253 61-66. https://doi.org/10.1002/pssb.201552263
The hetero-epitaxy of (11¯22) GaN on (10¯10) sapphire was optimized in metal–organic vapor phase epitaxy. Best results were obtained from an AlN nucleation followed by AlN and AlGaN layers, and inserting low-temperature AlN interlayers (ILs) as well as a SiN_x IL. X-ray diffraction (XRD) of ω scans of the symmetric (11¯22) reﬂection yielded an ω FWHM <450′′ along [11¯2¯3] and <900′′ along [10¯10] together with a 100 × 100 μm^2 rms roughness below 10 nm as determined by atomic force microscopy. The lowest threading dislocation density achieved was ≈10^9 cm^−2 while the basal plane stacking fault density was in the lower 10^5 cm^−1 range as determined by transmission electron microscopy. The suppression of the unwanted (10¯1¯3) phase was lower than 1 in 10,000 as judged from XRD.
This work was supported by EU-FP7 ALIGHT No. NMP-2011-280587 and the UK Engineering and Physical Sciences Research Council No. EP/I012591/1 and EP/J003603/1.
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External DOI: https://doi.org/10.1002/pssb.201552263
This record's URL: https://www.repository.cam.ac.uk/handle/1810/249172
Attribution 2.0 UK: England & Wales
Licence URL: http://creativecommons.org/licenses/by/2.0/uk/