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Optimizing GaN (1122) hetero-epitaxial templates grown on (1010) sapphire


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Authors

Pristovsek, M 
Frentrup, M 
Han, Y 
Humphreys, CJ 

Abstract

jats:titleAbstract</jats:title>jats:sec<jats:label />jats:pThe hetero‐epitaxy of (<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0005.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0005" />) GaN on (<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0006.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0006" />) sapphire was optimized in metal–organic vapor phase epitaxy. Best results were obtained from an AlN nucleation followed by AlN and AlGaN layers, and inserting low‐temperature AlN interlayers (ILs) as well as a SiNjats:subx</jats:sub> IL. X‐ray diffraction (XRD) of <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0007.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0007" /> scans of the symmetric (<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0008.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0008" />) reflection yielded an <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0009.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0009" /> FWHM <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0010.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0010" /> along [<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0011.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0011" />] and <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0012.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0012" /> along [<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0013.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0013" />] together with a <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0014.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0014" />m<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0015.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0015" /> rms roughness below 10 nm as determined by atomic force microscopy. The lowest threading dislocation density achieved was <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0016.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0016" />cm<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0017.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0017" /> while the basal plane stacking fault density was in the lower <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0018.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0018" />cm<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0019.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0019" /> range as determined by transmission electron microscopy. The suppression of the unwanted (<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0020.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0020" />) phase was lower than 1 in 10,000 as judged from XRD.</jats:p></jats:sec>

Description

Keywords

basal plane stacking faults, MOVPE growth, semi-polar GaN, XRD

Journal Title

Physica Status Solidi (B) Basic Research

Conference Name

Journal ISSN

0370-1972
1521-3951

Volume Title

253

Publisher

Wiley
Sponsorship
Engineering and Physical Sciences Research Council (EP/I012591/1)
Engineering and Physical Sciences Research Council (EP/J003603/1)
This work was supported by EU-FP7 ALIGHT No. NMP-2011-280587 and the UK Engineering and Physical Sciences Research Council No. EP/I012591/1 and EP/J003603/1.