Optimizing GaN (1122) hetero-epitaxial templates grown on (1010) sapphire
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jats:titleAbstract</jats:title>jats:sec<jats:label />jats:pThe hetero‐epitaxy of (<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0005.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0005" />) GaN on (<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0006.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0006" />) sapphire was optimized in metal–organic vapor phase epitaxy. Best results were obtained from an AlN nucleation followed by AlN and AlGaN layers, and inserting low‐temperature AlN interlayers (ILs) as well as a SiNjats:subx</jats:sub> IL. X‐ray diffraction (XRD) of <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0007.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0007" /> scans of the symmetric (<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0008.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0008" />) reflection yielded an <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0009.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0009" /> FWHM <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0010.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0010" /> along [<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0011.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0011" />] and <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0012.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0012" /> along [<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0013.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0013" />] together with a <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0014.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0014" />m<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0015.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0015" /> rms roughness below 10 nm as determined by atomic force microscopy. The lowest threading dislocation density achieved was <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0016.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0016" />cm<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0017.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0017" /> while the basal plane stacking fault density was in the lower <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0018.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0018" />cm<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0019.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0019" /> range as determined by transmission electron microscopy. The suppression of the unwanted (<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552263-math-0020.png" xlink:title="urn:x-wiley:15213951:media:pssb201552263:pssb201552263-math-0020" />) phase was lower than 1 in 10,000 as judged from XRD.</jats:p></jats:sec>
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1521-3951
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Engineering and Physical Sciences Research Council (EP/J003603/1)