Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions
Applied Physics Letters
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Hammersley, S., Kappers, M., Massabuau, F., Sahonta, L., Dawson, P., Oliver, R., & Humphreys, C. (2015). Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions. Applied Physics Letters, 107 (132106)https://doi.org/10.1063/1.4932200
InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green spectral region exhibit, in general, lower internal quantum efficiencies than their blue-emitting counter parts, a phenomenon referred to as the “green gap”. One of the main differences between green-emitting and blue-emitting samples is that the QW growth temperature is lower than for structures designed to emit at longer wavelengths, in order to reduce the effects of In desorption. In this paper, we report on the impact of the quantum well growth temperature on the optical properties of InGaN/GaN multiple quantum wells designed to emit at 460 nm and 530 nm. It was found that for both sets of samples increasing the temperature at which the InGaN quantum well was grown, while maintaining the same indium composition, led to an increase in the internal recombination quantum efficiency measured at 300 K. These increases in internal quantum efficiency are shown to be due reductions in the non-radiative recombination rate which we attribute to reductions in point defect incorporation.
This work was carried out with the financial support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Numbers EP/I012591/1 and EP/H011676/1.
External DOI: https://doi.org/10.1063/1.4932200
This record's URL: https://www.repository.cam.ac.uk/handle/1810/251132
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Licence URL: http://creativecommons.org/licenses/by/4.0/
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