Oxygen Defect-Induced Metastability in Oxide Semiconductors Probed by Gate Pulse Spectroscopy
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Lee, S., Nathan, A., Jeon, S., & Robertson, J. (2015). Oxygen Defect-Induced Metastability in Oxide Semiconductors Probed by Gate Pulse Spectroscopy. Scientific Reports, 5 (14902)https://doi.org/10.1038/srep14902
We investigate instability mechanisms in amorphous In-Ga-Zn-O transistors based on bias and illumination stress-recovery experiments coupled with analysis using stretched exponentials and inverse Laplace transform to retrieve the distribution of activation energies associated with metastable oxygen defects. Results show that the recovery process after illumination stress is persistently slow by virtue of defect states with a broad range, 0.85 eV to 1.38 eV, suggesting the presence of ionized oxygen vacancies and interstitials. We also rule out charge trapping/detrapping events since this requires a much smaller activation energy ~0.53 eV, and which tends to be much quicker. These arguments are supported by measurements using a novel gate-pulse spectroscopy probing technique that reveals the post-stress ionized oxygen defect profile, including anti-bonding states within the conduction band.
Characterization and analytical techniques, Electrical and electronic engineering, Electronic devices
Authors thank to the EU-FP7 under Project ORAMA CP-IP 246334-2. Also, they would like to thank Dr. J. W. Jin, University of Cambridge, UK for technical discussions.
External DOI: https://doi.org/10.1038/srep14902
This record's URL: https://www.repository.cam.ac.uk/handle/1810/251417
Attribution 2.0 UK: England & Wales
Licence URL: http://creativecommons.org/licenses/by/2.0/uk/
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