Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping.
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Authors
Abstract
Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This is reproduced by band profile simulations, which reveal the reduction of the Stark shift in the quantum wells by Si doping. We demonstrate nanocathodoluminescence is a powerful technique to optimize doping in optoelectronic devices.
Description
Keywords
InGaN optoelectronics, Nanocathodoluminescence, light emitting diodes, quantum confined Stark effect, scanning transmission electron microscopy, silicon doping
Journal Title
Nano Lett
Conference Name
Journal ISSN
1530-6984
1530-6992
1530-6992
Volume Title
15
Publisher
American Chemical Society (ACS)
Publisher DOI
Sponsorship
Engineering and Physical Sciences Research Council (EP/I012591/1)
Engineering and Physical Sciences Research Council (EP/J003603/1)
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/H047816/1)
Engineering and Physical Sciences Research Council (EP/H019324/1)
European Research Council (279361)
Engineering and Physical Sciences Research Council (EP/J003603/1)
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/H047816/1)
Engineering and Physical Sciences Research Council (EP/H019324/1)
European Research Council (279361)
This work was funded in part by the EPSRC (Grant no EP/ 253 J003603/1 and EP/H047816/1). The European Council has 254 provided financial support under the European Community’s 255 Seventh Framework Programme (FP7/2007-2013) ERC grant 256 agreement no. 279361 (MACONS).