Show simple item record

dc.contributor.authorZhang, Liangliangen
dc.contributor.authorLi, Huanglongen
dc.contributor.authorGuo, Yuzhengen
dc.contributor.authorTang, Kechaoen
dc.contributor.authorWoicik, Josephen
dc.contributor.authorRobertson, Johnen
dc.contributor.authorMcIntyre, Paul Cen
dc.date.accessioned2016-02-03T15:34:39Z
dc.date.available2016-02-03T15:34:39Z
dc.date.issued2015-09-03en
dc.identifier.citationACS Applied Materials & Interfaces 2015, 7 (37), pp 20499–20506 DOI: 10.1021/acsami.5b06087en
dc.identifier.issn1944-8244
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/253628
dc.description.abstractEffective passivation of interface defects in high-k metal oxide/Ge gate stacks is a longstanding goal of research on germanium metal-oxide-semiconductor devices. In this paper, we use photoelectron spectroscopy to probe the formation of a GeO2 interface layer between an atomic layer deposited Al2O3 gate dielectric and a Ge(100) substrate during forming gas anneal (FGA). Capacitance- and conductance-voltage data were used to extract the interface trap density energy distribution. These results show selective passivation of interface traps with energies in the top half of the Ge band gap under annealing conditions that produce GeO2 interface layer growth. First-principles modeling of Ge/GeO2 and Ge/GeO/GeO2 structures and calculations of the resulting partial density of states (PDOS) are in good agreement with the experiment results.
dc.description.sponsorshipThis work was supported in part by the Stanford Initiative for Nanoscale Materials and Processes (INMP). This work was performed at the National Synchrotron Light Source and the Stanford Synchrotron Radiation Laboratory, which are supported by the US Department of Energy. Additional support was provided by the National Institute of Standards and Technology.
dc.languageEnglishen
dc.language.isoenen
dc.publisherACS
dc.subjectAl2O3en
dc.subjectGeen
dc.subjecthigh-ken
dc.subjectinterface trapsen
dc.titleSelective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structuresen
dc.typeArticle
dc.description.versionThis is the accepted manuscript. The final version is available at http://pubs.acs.org/doi/abs/10.1021/acsami.5b06087.en
prism.endingPage20506
prism.publicationDate2015en
prism.publicationNameACS Applied Materials & Interfacesen
prism.startingPage37
prism.volume7en
rioxxterms.versionofrecord10.1021/acsami.5b06087en
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2015-09-03en
dc.identifier.eissn1944-8252
rioxxterms.typeJournal Article/Reviewen
rioxxterms.freetoread.startdate2016-09-03


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record