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Ab-initio simulations of higher Miller index Si:SiO2 interfaces for fin field effect transistor and nanowire transistors


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Type

Article

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Authors

Guo, Y 
Robertson, J 
Okuno, Y 

Abstract

jats:pModels of three representative higher Miller index interfaces, Si(310):SiO2, Si(410):SiO2, and Si(331):SiO2, have been built by an ab-initio molecular dynamics method. We show that each interface can be made as a fully bonded network without any defects and has a reasonable electronic structure for use in fin field effect transistors or gate-all-around nanowire devices. The differences in numbers of oxygen bridges are attributed to the intermediate sub-oxide components and the atomic step structure. The interface bonding schemes to passivate different densities of dangling bonds on different facets are also analyzed.</jats:p>

Description

Keywords

Si, higher index, interface, SiO2, FinFET

Journal Title

Journal of Applied Physics

Conference Name

Journal ISSN

0021-8979
1089-7550

Volume Title

119

Publisher

AIP Publishing
Sponsorship
Engineering and Physical Sciences Research Council (EP/I014047/1)