Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device
Das, Gupta K
Applied Physics Letters
American Institute of Physics
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Zheng, B., Croxall, A., Waldie, J., Das, G. K., Sfigakis, F., Farrer, I., Beere, H., & et al. (2016). Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device. Applied Physics Letters, 108 (062102)https://doi.org/10.1063/1.4941760
We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. Coulomb drag resistivity is a direct measure of the strength of interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter rs up to 14). Our ambipolar device design allows a comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions and also shows the effects of the different effective masses of electrons and holes in GaAs.
Host Item: https://www.repository.cam.ac.uk/handle/1810/253191
This work was financially supported by the UK Engineering and Physical Sciences Research Council. A.F.C. acknowledges financial support from Trinity College, Cambridge, and IF from Toshiba Research Europe.
UNIVERSITY COLLEGE LONDON (FB EPSRC) (EP/K004077/1)
External DOI: https://doi.org/10.1063/1.4941760
Attribution-NonCommercial 2.0 UK: England & Wales
Licence URL: http://creativecommons.org/licenses/by-nc/2.0/uk/
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