Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device
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Abstract
We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. Coulomb drag resistivity is a direct measure of the strength of interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter rs up to 14). Our ambipolar device design allows a comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions and also shows the effects of the different effective masses of electrons and holes in GaAs.
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Journal Title
Applied Physics Letters
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Journal ISSN
0003-6951
1077-3118
1077-3118
Volume Title
108
Publisher
American Institute of Physics
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Sponsorship
EPSRC (EP/J003417/1)
EPSRC (EP/H017720/1)
UNIVERSITY COLLEGE LONDON (FB EPSRC) (EP/K004077/1)
EPSRC (EP/H017720/1)
UNIVERSITY COLLEGE LONDON (FB EPSRC) (EP/K004077/1)
This work was financially supported by the UK Engineering and Physical Sciences Research Council. A.F.C. acknowledges financial support from Trinity College, Cambridge, and IF from Toshiba Research Europe.