Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures
Physica Status Solidi (C)
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Hammersley, S., Kappers, M., Massabuau, F., Sahonta, L., Dawson, P., Oliver, R., & Humphreys, C. (2016). Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures. Physica Status Solidi (C), 13 209-213. https://doi.org/10.1002/pssc.201510187
In this paper we report on the impact that the quantum well growth temperature has on the internal quantum efficiency and carrier recombination dynamics of two sets of InGaN/GaN multiple quantum well samples, designed to emit at 460 and 530 nm, in which the indium content of the quantum wells within each sample set was maintained. Measurements of the internal quantum efficiency of each sample set showed a systematic variation, with quantum wells grown at a higher temperature exhibiting higher internal quantum efficiency and this variation was preserved at all excitation power densities. By investigating the carrier dynamics at both 10 K and 300 K we were able to attribute this change in internal quantum efficiency to a decrease in the non-radiative recombination rate as the QW growth temperature was increased which we attribute to a decrease in incorporation of the point defects.
green gap, InGaN, quantum wells, efficiency, photoluminescence
This work was carried out with the financial support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/I012591/1 and EP/H011676/1.
European Research Council (279361)
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External DOI: https://doi.org/10.1002/pssc.201510187
This record's URL: https://www.repository.cam.ac.uk/handle/1810/253857