Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs
Physica Status Solidi (C)
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Hammersley, S., Dawson, P., Kappers, M., Massabuau, F., Frentrup, M., Oliver, R., & Humphreys, C. (2016). Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs. Physica Status Solidi (C), 13 262-265. https://doi.org/10.1002/pssc.201510188
In this paper we investigate the effect of including an electron blocking layer between the quantum well active region and the p-type layers of a light emitting diode has on the conduction and valence band profile of a light emitting diode. Two light emitting diode structures with nominally identical quantum well active regions one containing an electron blocking layer and one without were grown for the purposes of this investigation. The conduction and valence band profiles for both structures were then calculated using a commercially available Schrödinger-Poisson calculator, and a modification to the electric field across the QWs observed. The results of these calculations were then compared to photoluminescence and photoluminescence time decay measurements. The modification in electric field across the quantum wells of the structures resulted in slower radiative recombination in the sample containing an electron blocking layers. The sample containing an electron blocking layer was also found to exhibit a lower internal quantum efficiency, which we attribute to the observed slower radiative recombination lifetime making radiative recombination less competitive.
LEDs, electron blocking layers, efficiency, photoluminescence
This work was carried out with the financial support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/I012591/1 and EP/H011676/1.
European Research Council (279361)
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External DOI: https://doi.org/10.1002/pssc.201510188
This record's URL: https://www.repository.cam.ac.uk/handle/1810/253859