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dc.contributor.authorHammersley, S
dc.contributor.authorDawson, P
dc.contributor.authorKappers, Menno
dc.contributor.authorMassabuau, Fabien
dc.contributor.authorFrentrup, Martin
dc.contributor.authorOliver, Rachel
dc.contributor.authorHumphreys, Colin
dc.date.accessioned2016-02-19T12:09:12Z
dc.date.available2016-02-19T12:09:12Z
dc.date.issued2016
dc.identifier.issn1862-6351
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/253859
dc.description.abstractIn this paper we investigate the effect of including an electron blocking layer between the quantum well active region and the p-type layers of a light emitting diode has on the conduction and valence band profile of a light emitting diode. Two light emitting diode structures with nominally identical quantum well active regions one containing an electron blocking layer and one without were grown for the purposes of this investigation. The conduction and valence band profiles for both structures were then calculated using a commercially available Schrödinger-Poisson calculator, and a modification to the electric field across the QWs observed. The results of these calculations were then compared to photoluminescence and photoluminescence time decay measurements. The modification in electric field across the quantum wells of the structures resulted in slower radiative recombination in the sample containing an electron blocking layers. The sample containing an electron blocking layer was also found to exhibit a lower internal quantum efficiency, which we attribute to the observed slower radiative recombination lifetime making radiative recombination less competitive.
dc.description.sponsorshipThis work was carried out with the financial support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/I012591/1 and EP/H011676/1.
dc.languageEnglish
dc.language.isoen
dc.publisherWiley
dc.rightsAttribution 4.0 International
dc.rightsAttribution 4.0 International
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectLEDs
dc.subjectelectron blocking layers
dc.subjectefficiency
dc.subjectphotoluminescence
dc.titleEffect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs
dc.typeArticle
dc.description.versionThis is the final version of the article. It first appeared from Wiley via http://dx.doi.org/10.1002/pssc.201510188
prism.endingPage265
prism.publicationDate2016
prism.publicationNamePhysica Status Solidi (C) Current Topics in Solid State Physics
prism.startingPage262
prism.volume13
dc.rioxxterms.funderEPSRC
dc.rioxxterms.projectidEP/I012591/1
dc.rioxxterms.projectidEP/H011676/1
rioxxterms.versionofrecord10.1002/pssc.201510188
rioxxterms.licenseref.urihttp://creativecommons.org/licenses/by/4.0/
rioxxterms.licenseref.startdate2016-02-17
dc.contributor.orcidMassabuau, Fabien [0000-0003-1008-1652]
dc.contributor.orcidOliver, Rachel [0000-0003-0029-3993]
dc.contributor.orcidHumphreys, Colin [0000-0001-5053-3380]
dc.identifier.eissn1610-1642
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEuropean Research Council (279361)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/E035167/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/H019324/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/I012591/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/M010589/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (TS/G001383/1)
cam.issuedOnline2016-02-17
cam.orpheus.successThu Jan 30 12:55:08 GMT 2020 - The item has an open VoR version.
rioxxterms.freetoread.startdate2100-01-01


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Attribution 4.0 International
Except where otherwise noted, this item's licence is described as Attribution 4.0 International