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A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

Accepted version
Peer-reviewed

Repository DOI


Type

Article

Change log

Authors

Niang, KM 
Barquinha, PMC 
Martins, RFP 
Cobb, B 
Powell, MJ 

Abstract

jats:pThin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 107 s−1. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.</jats:p>

Description

Keywords

40 Engineering, 4016 Materials Engineering, 51 Physical Sciences

Journal Title

Applied Physics Letters

Conference Name

Journal ISSN

0003-6951
1077-3118

Volume Title

108

Publisher

AIP Publishing
Sponsorship
European Commission (246334)
The research leading to these results has received funding from the European Community’s 7th Framework Programme under grant agreement NMP3-LA-2010-246334. Financial support of the European Commission is therefore gratefully acknowledged. The work has also received funding from FEDER through the COMPETE 2020 Programme and National Funds through FCT–Portuguese Foundation for Science and Technology under the Project No. UID/CTM/50025/2013.