Research data supporting "Large Fermi Surface of Heavy Electrons at the Border of Mott Insulating State in NiS2"
Gamża, M. B.
Coniglio, W. A.
University of Cambridge
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Friedemann, S., Chang, H., Gamża, M. B., Reiss, P., Chen, X., Alireza, P., Coniglio, W. A., et al. (2016). Research data supporting "Large Fermi Surface of Heavy Electrons at the Border of Mott Insulating State in NiS2" [Dataset]. https://doi.org/10.17863/CAM.68973
High pressure, low temperature, high magnetic field data obtained on high quality single crystals of NiS2, to clarify the nature of the pressure induced metal-insulator transition and to map out key parts of the electronic Fermi surface in the high pressure metallic state. Resistivity measurements under pressure were carried out at the Cavendish Laboratory, Cambridge, and tank circuit oscillator measurements were carried out at NHMFL Tallahassee. The Fermi surface calculations were performed using Wien2k and plotted using Xcrysden. Details of the methods and analysis methods are published in the Scientific Reports article with the same name.
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Publication Reference: https://doi.org/10.1038/srep25335
This work was supported by the ERC, EPSRC [grant number EP/K012894/1], NSF [grant number DMR-1157490], DOE [grant number NNSA SSAA DE-NA0001979].
This record's DOI: https://doi.org/10.17863/CAM.68973
Attribution-NonCommercial-NoDerivs 2.0 UK: England & Wales
Licence URL: http://creativecommons.org/licenses/by-nc-nd/2.0/uk/
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