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dc.contributor.authorGuo, Y.
dc.contributor.authorLi, H.
dc.contributor.authorRobertson, J.
dc.date.accessioned2016-06-16T08:03:49Z
dc.date.available2016-06-16T08:03:49Z
dc.date.issued2016-05-24
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/256335
dc.descriptionThis is the author accepted manuscript. The final version is available from AIP Publishing via http://dx.doi.org/10.1063/1.4951004en
dc.description.abstractAlN and Al oxy-nitride dielectric layers are proposed instead of Al$_2$O$_3$ as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al$_2$O$_3$, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al$_2$O$_3$ is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.en
dc.description.sponsorshipEngineering and Physical Sciences Research Council
dc.language.isoenen
dc.publisherAmerican Institute of Physics Publishingen
dc.titleAlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channelsen
dc.typeArticleen
prism.issueIdentifier20en
prism.number204101en
prism.publicationNameJournal of Applied Physicsen
prism.volume119en
dc.identifier.doi10.17863/CAM.278
dcterms.dateAccepted2016-05-17
rioxxterms.versionofrecord10.1063/1.4951004en
rioxxterms.versionAMen


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