dc.contributor.author Guo, Y. dc.contributor.author Li, H. dc.contributor.author Robertson, J. dc.date.accessioned 2016-06-16T08:03:49Z dc.date.available 2016-06-16T08:03:49Z dc.date.issued 2016-05-24 dc.identifier.uri https://www.repository.cam.ac.uk/handle/1810/256335 dc.description This is the author accepted manuscript. The final version is available from AIP Publishing via http://dx.doi.org/10.1063/1.4951004 en dc.description.abstract AlN and Al oxy-nitride dielectric layers are proposed instead of Al$_2$O$_3$ as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al$_2$O$_3$, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al$_2$O$_3$ is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping. en dc.description.sponsorship Engineering and Physical Sciences Research Council dc.language.iso en en dc.publisher American Institute of Physics Publishing en dc.title AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels en dc.type Article en prism.issueIdentifier 20 en prism.number 204101 en prism.publicationName Journal of Applied Physics en prism.volume 119 en dc.identifier.doi 10.17863/CAM.278 dcterms.dateAccepted 2016-05-17 rioxxterms.versionofrecord 10.1063/1.4951004 en rioxxterms.version AM en
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