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Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

Published version
Peer-reviewed

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Authors

Davies, MJ 
Hammersley, S 
Kappers, MJ 

Abstract

jats:pWe report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10 K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ∼100 fs at a repetition rate of 400 kHz. For both types of structures, efficiency droop was observed to occur for carrier densities of above 7 × 1011 cm−2 pulse−1 per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar, and is a function, specifically, of carrier density.</jats:p>

Description

Keywords

5108 Quantum Physics, 51 Physical Sciences

Journal Title

Applied Physics Letters

Conference Name

Journal ISSN

0003-6951
1077-3118

Volume Title

108

Publisher

AIP Publishing
Sponsorship
Engineering and Physical Sciences Research Council (EP/M011682/1)
Engineering and Physical Sciences Research Council (EP/J003603/1)
Engineering and Physical Sciences Research Council (EP/E035167/1)
Engineering and Physical Sciences Research Council (EP/H019324/1)
Engineering and Physical Sciences Research Council (EP/I012591/1)
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (TS/G001383/1)
Engineering and Physical Sciences Research Council (Grant IDs: EP\J001627\1 and EP\J003603\1)
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