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Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

Accepted version
Peer-reviewed

Type

Article

Change log

Authors

Nathan, A 

Abstract

The quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime (i.e., near the OFF state) at low supply voltages (<1 volt) and ultralow power (<1 nanowatt). By using a Schottky-barrier at the source and drain contacts, the current-voltage characteristics of the transistor were virtually channel-length independent with an infinite output resistance. It exhibited high intrinsic gain (>400) that was both bias and geometry independent. The transistor reported here is useful for sensor interface circuits in wearable devices where high current sensitivity and ultralow power are vital for battery-less operation.

Description

Keywords

0906 Electrical and Electronic Engineering

Journal Title

Science

Conference Name

Journal ISSN

0036-8075
1095-9203

Volume Title

354

Publisher

American Association for the Advancement of Science
Sponsorship
Engineering and Physical Sciences Research Council (EP/M013650/1)
European Commission Horizon 2020 (H2020) Marie Sk?odowska-Curie actions (645760)
European Commission (246334)
European Commission Horizon 2020 (H2020) Research Infrastructures (RI) (692373)
European Commission Horizon 2020 (H2020) Research Infrastructures (RI) (685758)
We thank EPSRC under Project EP/M013650/1, EU under Projects DOMINO 645760 , ORAMA 246334 , 1D-NEON 685758-2 and BET-U 692373 , and Danbond under Project 69191 for the generous support.