Modeling of switching mechanism in GeSbTe chalcogenide superlattices.
Nature Publishing Group
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Yu, X., & Robertson, J. (2015). Modeling of switching mechanism in GeSbTe chalcogenide superlattices.. Sci Rep, 5 12612-12612. https://doi.org/10.1038/srep12612
We study the switching process in chalcogenide superlattice (CSL) phase-change memory materials by describing the motion of an atomic layer between the low and high resistance states. Two models have been proposed by different groups based on high-resolution electron microscope images. Model 1 proposes a transition from Ferro to Inverted Petrov state. Model 2 proposes a switch between Petrov and Inverted Petrov states. For each case, we note that the main transition is actually a vertical displacement of a Ge layer through a Te layer, followed by a lateral motion of GeTe sublayer to the final, low energy structure. Through calculating energy barriers, the rate-determining step is the displacive transition.
EC FP7 CP (317746)
External DOI: https://doi.org/10.1038/srep12612
This record's URL: https://www.repository.cam.ac.uk/handle/1810/261413