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dc.contributor.authorKundys, D
dc.contributor.authorSutherland, D
dc.contributor.authorDavies, MJ
dc.contributor.authorOehler, F
dc.contributor.authorGriffiths, J
dc.contributor.authorDawson, P
dc.contributor.authorKappers, MJ
dc.contributor.authorHumphreys, CJ
dc.contributor.authorSchulz, S
dc.contributor.authorTang, F
dc.contributor.authorOliver, RA
dc.date.accessioned2016-12-05T16:48:08Z
dc.date.available2016-12-05T16:48:08Z
dc.date.issued2016-11
dc.identifier.issn1468-6996
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/261445
dc.description.abstractWe report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells grown on nonpolar (11$\bar 2$0) $\textit{a}$-plane and (10$\bar 1$0) m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are broad with full width at half maximum height increasing from 81 to 330 meV as the In fraction increases. Photoluminescence excitation spectroscopy indicates that the recombination mainly involves strongly localised carriers. At 10 K the degree of linear polarisation of the $\textit{a}$-plane samples is much smaller than of the $\textit{m}$-plane counterparts and also varies across the spectrum. From polarisation-resolved photoluminescence excitation spectroscopy we measured the energy splitting between the lowest valence sub-bands to lie in the range of 23–54 meV for the $\textit{a}$- and $\textit{m}$-plane samples in which we could observe distinct exciton features. Thus the thermal occupation of a higher valence sub-band cannot be responsible for the reduction of the degree of linear polarisation at 10 K. Time-resolved spectroscopy indicates that in $\textit{a}$-plane samples there is an extra emission component which is at least partly responsible for the reduction in the degree of linear polarisation.
dc.description.sponsorshipThis work was supported by UK Engineering and Physical Sciences Research Council [grant numbers EP\J001627\1, EP\J003603\1]; and Science Foundation Ireland [grant number 13/SIRG/2210].
dc.languageENG
dc.language.isoen
dc.publisherInstitute of Physics
dc.rightsAttribution 4.0 International
dc.rightsAttribution 4.0 International
dc.rightsAttribution 4.0 International
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectInGaN
dc.subjectquantum wells
dc.subjectpolarised light
dc.subjectnon-polar
dc.titleA study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on $\textit{a}$-plane and $\textit{m}$-plane GaN substrates
dc.typeArticle
prism.endingPage743
prism.issueIdentifier1
prism.publicationDate2016
prism.publicationNameScience and Technology of Advanced Materials
prism.startingPage736
prism.volume17
dc.identifier.doi10.17863/CAM.6633
dcterms.dateAccepted2016-09-30
rioxxterms.versionofrecord10.1080/14686996.2016.1244474
rioxxterms.versionVoR
rioxxterms.licenseref.urihttp://creativecommons.org/licenses/by/4.0/
rioxxterms.licenseref.startdate2016-11
dc.contributor.orcidGriffiths, James [0000-0002-1198-1372]
dc.contributor.orcidHumphreys, Colin [0000-0001-5053-3380]
dc.contributor.orcidOliver, Rachel [0000-0003-0029-3993]
dc.identifier.eissn1878-5514
dc.publisher.urlhttp://dx.doi.org/10.1080/14686996.2016.1244474
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEuropean Research Council (279361)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/E035167/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/H019324/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/I012591/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/M010589/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (TS/G001383/1)
cam.issuedOnline2016-11-10
cam.orpheus.successThu Jan 30 12:56:52 GMT 2020 - The item has an open VoR version.
rioxxterms.freetoread.startdate2100-01-01


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