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dc.contributor.authorGriffiths, Jamesen
dc.contributor.authorZhang, Siyuanen
dc.contributor.authorLhuillier, Jen
dc.contributor.authorZhu, Dandanen
dc.contributor.authorFu, WYen
dc.contributor.authorHowkins, Aen
dc.contributor.authorBoyd, Ien
dc.contributor.authorStowe, Den
dc.contributor.authorWallis, Daviden
dc.contributor.authorHumphreys, Colinen
dc.contributor.authorOliver, Rachelen
dc.date.accessioned2016-12-16T14:05:31Z
dc.date.available2016-12-16T14:05:31Z
dc.date.issued2016-10-28en
dc.identifier.issn0021-8979
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/261616
dc.description.abstractNano-cathodoluminescence (Nano-CL) reveals optical emission from individual InGaN quantum wells for applications in optoelectronic devices. We show the luminescent intensity decays over time with exposure to the electron beam for energies between 80 and 200 keV. Measurements of the CL intensity over time show an exponential decline in intensity, which we propose is due to the formation of nitrogen Frenkel defects. The measured CL damage decreases with reductions in the electron accelerating voltage and we suggest that the electron induced structural damage may be suppressed below the proposed damage threshold. The electron beam induced damage leads to a non-radiative region that extends over the measured minority carrier diffusion length. Nano-CL may thus serve as a powerful technique to study III-nitride optoelectronics.
dc.description.sponsorshipThis work was carried out with the support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/NO17927/1 and EP/J003603/1. R. Oliver acknowledges funding from the European Research Council under the European Community's Seventh Framework Programme (FP7/2007-2013) ERC grant agreement number 279361 (MACONS) and the from the Royal Academy of Engineers/Leverhulme Trust senior research fellowship.
dc.languageENGen
dc.language.isoenen
dc.publisherAmerican Institute of Physics
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectcathodoluminescenceen
dc.subjectquantum wellsen
dc.subjectIII-IV semiconductorsen
dc.subjectdiffusionen
dc.subjectelectron beamsen
dc.titleNano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage thresholden
dc.typeArticle
prism.issueIdentifier16en
prism.number165704en
prism.publicationDate2016en
prism.publicationNameJournal of Applied Physicsen
prism.volume120en
dc.identifier.doi10.17863/CAM.6825
dcterms.dateAccepted2016-10-10en
rioxxterms.versionofrecord10.1063/1.4965989en
rioxxterms.versionVoRen
rioxxterms.licenseref.urihttp://creativecommons.org/licenses/by/4.0/en
rioxxterms.licenseref.startdate2016-10-28en
dc.contributor.orcidGriffiths, James [0000-0002-1198-1372]
dc.contributor.orcidWallis, David [0000-0002-0475-7583]
dc.contributor.orcidHumphreys, Colin [0000-0001-5053-3380]
dc.contributor.orcidOliver, Rachel [0000-0003-0029-3993]
dc.identifier.eissn1089-7550
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEPSRC (EP/J003603/1)
pubs.funder-project-idEuropean Research Council (279361)
pubs.funder-project-idEPSRC (EP/N01202X/1)
pubs.funder-project-idEPSRC (EP/N017927/1)
cam.issuedOnline2016-10-28en
datacite.issupplementedby.doi10.17863/CAM.6009en


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Attribution 4.0 International
Except where otherwise noted, this item's licence is described as Attribution 4.0 International